Invention Grant
- Patent Title: System and method for gas-phase passivation of a semiconductor surface
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Application No.: US15397319Application Date: 2017-01-03
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Publication No.: US09905492B2Publication Date: 2018-02-27
- Inventor: Fu Tang , Michael E. Givens , Qi Xie , Petri Raisanen
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/02 ; H01L23/02 ; H01L21/67 ; H01L23/29 ; H01L21/306 ; C23C16/44 ; C23C16/455
Abstract:
Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.
Public/Granted literature
- US20170117203A1 SYSTEM AND METHOD FOR GAS-PHASE PASSIVATION OF A SEMICONDUCTOR SURFACE Public/Granted day:2017-04-27
Information query
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