Invention Grant
- Patent Title: Manufacturing method of a LTPS array substrate
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Application No.: US14779089Application Date: 2015-07-31
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Publication No.: US09905590B2Publication Date: 2018-02-27
- Inventor: Cong Wang , Peng Du , Xiaoxiao Wang
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong CN Wuhan, Hubei
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.,Wuhan China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.,Wuhan China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen, Guangdong CN Wuhan, Hubei
- Agent Andrew C. Cheng
- Priority: CN201510443670 20150724
- International Application: PCT/CN2015/085660 WO 20150731
- International Announcement: WO2017/015970 WO 20170202
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; G02F1/1368

Abstract:
The present invention provides a LTPS array substrate and a manufacturing method thereof. The method comprises: forming a source electrode and a drain electrode on a substrate, forming polysilicon layers of a first region and a second region on the substrate including the source electrode and the drain electrode, and the thickness of the polysilicon layer of the first region is greater than the one of the second region, the polysilicon layer of the first region partially covers the source electrode and the drain electrode; passivating the surface of the polysilicon layer in order to turn the part of the adjacent surface of the polysilicon layer of the second region and the first region into an insulating layer; forming a gate electrode on the insulating layer between the source electrode and the drain electrode. The present invention can simplify the LTPS technical process and reduce the producing costs.
Public/Granted literature
- US20170170203A1 LTPS ARRAY SUBSTRATE AND MANUFACTORING METHOD THEREOF Public/Granted day:2017-06-15
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