Invention Grant
- Patent Title: Bipolar junction transistors and methods of fabrication
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Application No.: US15057791Application Date: 2016-03-01
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Publication No.: US09905668B2Publication Date: 2018-02-27
- Inventor: Jagar Singh
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Nathan B. Davis
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L29/739 ; H01L29/45 ; H01L29/40 ; H01L29/735 ; H01L29/417 ; H01L29/08
Abstract:
A structure, including a bipolar junction transistor and method of fabrication thereof, is provided herein. The bipolar junction transistor includes: a substrate including a substrate region having a first conductivity type; an emitter region over a first portion of the substrate region, the emitter region having a second conductivity type; a collector region over a second portion of the substrate region, the collector region having the second conductivity type; and, a base region overlie structure disposed over, in part, the substrate region. The base region overlie structure separates the emitter region from the collector region and aligns to a base region of the bipolar junction transistor within the substrate region, between the first portion and the second portion of the substrate region.
Public/Granted literature
- US20160181393A1 BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FABRICATION Public/Granted day:2016-06-23
Information query
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