Invention Grant
- Patent Title: Optoelectronic device including quantum dot
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Application No.: US15091650Application Date: 2016-04-06
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Publication No.: US09905790B2Publication Date: 2018-02-27
- Inventor: Weonkyu Koh , Taeho Shin , Kyungsang Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2015-0149720 20151027
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/42

Abstract:
Provided are optoelectronic devices including quantum dots. An optoelectronic device may include an active layer including a quantum dot and at least one molecular interlayer adjacent to the active layer. The active layer may be provided between two electrodes, and a charge transfer layer may be provided adjacent to the active layer. The molecular interlayer may be provided between the active layer and the charge transfer layer. The molecular interlayer may have a smaller amount of surface charge than the charge transfer layer. The molecular interlayer may include a nonionic material or a hydrophobic material. The charge transfer layer may include an electron transport layer, and the electron transport layer may include an inorganic semiconductor.
Public/Granted literature
- US20170117496A1 OPTOELECTRONIC DEVICE INCLUDING QUANTUM DOT Public/Granted day:2017-04-27
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