Opto-electronic device and image sensor including the same

    公开(公告)号:US11646393B2

    公开(公告)日:2023-05-09

    申请号:US17036962

    申请日:2020-09-29

    摘要: Provided is an opto-electronic device including a semiconductor substrate doped with a first conductivity type impurity, a source region and a drain region provided on the semiconductor substrate spaced apart from each other and doped with a second conductivity type impurity which is electrically opposite to the first conductivity type impurity, a first electrode and a second electrode electrically connected to the source region and the drain region, respectively, a quantum dot layer provided between the source region and the drain region on the semiconductor substrate and including quantum dots, a first insulation layer configured to insulate the semiconductor substrate and the quantum dot layer from each other, and a transparent electrode layer provided on the quantum dot layer.

    Filter array, spectral detector including the filter array and spectrometer employing the spectral detector

    公开(公告)号:US11137286B2

    公开(公告)日:2021-10-05

    申请号:US15888754

    申请日:2018-02-05

    发明人: Kyungsang Cho

    摘要: Provided are a filter array, a spectral detector including the filter array, and a spectrometer employing the spectral detector. The filter array may have a multi-array structure including a plurality of filter arrays. The filter array may include a first filter array having a first structure in which a plurality of first filters with different transmittance spectrums are arranged, and a second filter array having a second structure in which a plurality of second filters with different transmittance spectrums are arranged, the second filter array being arranged to at least partially overlap the first filter array at a first position relative to the first filter array so that the multi-arrangement type filter array has a first set of absorbance characteristics. The second filter array may be configurable to be arranged to at least partially overlap the first filter array at a second position relative to the first filter array so that the multi-arrangement type filter array has a second set of absorbance characteristics different from the first set of absorbance characteristics.

    OPTO-ELECTRONIC DEVICE AND IMAGE SENSOR INCLUDING THE SAME

    公开(公告)号:US20210376190A1

    公开(公告)日:2021-12-02

    申请号:US17036962

    申请日:2020-09-29

    摘要: Provided is an opto-electronic device including a semiconductor substrate doped with a first conductivity type impurity, a source region and a drain region provided on the semiconductor substrate spaced apart from each other and doped with a second conductivity type impurity which is electrically opposite to the first conductivity type impurity, a first electrode and a second electrode electrically connected to the source region and the drain region, respectively, a quantum dot layer provided between the source region and the drain region on the semiconductor substrate and including quantum dots, a first insulation layer configured to insulate the semiconductor substrate and the quantum dot layer from each other, and a transparent electrode layer provided on the quantum dot layer.

    Optoelectronic device including quantum dot

    公开(公告)号:US09905790B2

    公开(公告)日:2018-02-27

    申请号:US15091650

    申请日:2016-04-06

    IPC分类号: H01L51/50 H01L51/42

    摘要: Provided are optoelectronic devices including quantum dots. An optoelectronic device may include an active layer including a quantum dot and at least one molecular interlayer adjacent to the active layer. The active layer may be provided between two electrodes, and a charge transfer layer may be provided adjacent to the active layer. The molecular interlayer may be provided between the active layer and the charge transfer layer. The molecular interlayer may have a smaller amount of surface charge than the charge transfer layer. The molecular interlayer may include a nonionic material or a hydrophobic material. The charge transfer layer may include an electron transport layer, and the electron transport layer may include an inorganic semiconductor.

    Filter array, spectral detector including the filter array and spectrometer employing the spectral detector

    公开(公告)号:US11913832B2

    公开(公告)日:2024-02-27

    申请号:US17459942

    申请日:2021-08-27

    发明人: Kyungsang Cho

    摘要: Provided are a filter array, a spectral detector including the filter array, and a spectrometer employing the spectral detector. The filter array may have a multi-array structure including a plurality of filter arrays. The filter array may include a first filter array having a first structure in which a plurality of first filters with different transmittance spectrums are arranged, and a second filter array having a second structure in which a plurality of second filters with different transmittance spectrums are arranged, the second filter array being arranged to at least partially overlap the first filter array at a first position relative to the first filter array so that the multi-arrangement type filter array has a first set of absorbance characteristics. The second filter array may be configurable to be arranged to at least partially overlap the first filter array at a second position relative to the first filter array so that the multi-arrangement type filter array has a second set of absorbance characteristics different from the first set of absorbance characteristics.