- 专利标题: Substrate structure and fabrication method thereof
-
申请号: US14833101申请日: 2015-08-23
-
公开(公告)号: US09907161B2公开(公告)日: 2018-02-27
- 发明人: Jin-Wei You , Chun-Lung Chen
- 申请人: Siliconware Precision Industries Co., Ltd.
- 申请人地址: TW Taichung
- 专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人地址: TW Taichung
- 代理机构: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- 代理商 Peter F. Corless; Steven M. Jensen
- 优先权: TW103137357A 20141029
- 主分类号: H05K1/00
- IPC分类号: H05K1/00 ; H05K1/02 ; H05K3/00 ; H05K3/46 ; H05K3/18
摘要:
A method for fabricating a substrate structure is provided, which includes the steps of: disposing at least a strengthening member on a carrier; sequentially forming a first circuit layer and a dielectric layer on the carrier, wherein the strengthening member is embedded in the dielectric layer; forming a second circuit layer on the dielectric layer; removing the carrier; and forming an insulating layer on the first circuit layer and the second circuit layer. The strengthening member facilitates to reduce thermal warping of the substrate structure.
公开/授权文献
- US20160128184A1 SUBSTRATE STRUCTURE AND FABRICATION METHOD THEREOF 公开/授权日:2016-05-05
信息查询