Invention Grant
- Patent Title: Substrate structure and fabrication method thereof
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Application No.: US14833101Application Date: 2015-08-23
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Publication No.: US09907161B2Publication Date: 2018-02-27
- Inventor: Jin-Wei You , Chun-Lung Chen
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW103137357A 20141029
- Main IPC: H05K1/00
- IPC: H05K1/00 ; H05K1/02 ; H05K3/00 ; H05K3/46 ; H05K3/18

Abstract:
A method for fabricating a substrate structure is provided, which includes the steps of: disposing at least a strengthening member on a carrier; sequentially forming a first circuit layer and a dielectric layer on the carrier, wherein the strengthening member is embedded in the dielectric layer; forming a second circuit layer on the dielectric layer; removing the carrier; and forming an insulating layer on the first circuit layer and the second circuit layer. The strengthening member facilitates to reduce thermal warping of the substrate structure.
Public/Granted literature
- US20160128184A1 SUBSTRATE STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2016-05-05
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