Invention Grant
- Patent Title: Reducing read latency of memory modules
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Application No.: US15114098Application Date: 2014-01-31
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Publication No.: US09916098B2Publication Date: 2018-03-13
- Inventor: Raphael Gay , Siamak Tavallaei
- Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Hewlett Packard Enterprise Patent Department
- International Application: PCT/US2014/014024 WO 20140131
- International Announcement: WO2015/116135 WO 20150806
- Main IPC: G06F12/08
- IPC: G06F12/08 ; G06F3/06 ; G06F13/16 ; G06F12/0802 ; G06F12/02 ; G06F12/06

Abstract:
Example implementations relate to using an alternative memory (AltMem) to reduce read latency of a memory module having a dynamic random-access memory (DRAM). In example implementations, write data may be written to the DRAM and to the AltMem. A read command may be issued to the AltMem if a DRAM read latency time for executing the read command is greater than an AltMem read latency time for executing the read command. Data read from the AltMem in response to the read command may be received.
Public/Granted literature
- US20160371015A1 REDUCING READ LATENCY OF MEMORY MODULES Public/Granted day:2016-12-22
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