- 专利标题: High-frequency power amplifier
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申请号: US15503590申请日: 2016-01-28
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公开(公告)号: US09917559B2公开(公告)日: 2018-03-13
- 发明人: Hiroyuki Nonomura , Jun Nishihara , Toshihiro Fujii
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Chiyoda-ku
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Chiyoda-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2015-078390 20150407
- 国际申请: PCT/JP2016/052464 WO 20160128
- 国际公布: WO2016/163136 WO 20161013
- 主分类号: H03F3/68
- IPC分类号: H03F3/68 ; H03F3/60 ; H03F3/195 ; H03F1/02 ; H03F3/21
摘要:
An in-line waveguide divider divides power of an incoming high-frequency signal among openings. Amplification boards disposed on a base are provided for respective openings and are each connected in parallel with one another to the in-line waveguide divider. An in-line waveguide combiner includes openings formed correspondingly to the amplification boards, and is connected to the amplification boards. An electrically conductive amplifier cover includes walls formed to provide isolation between circuits of the amplification boards continuously from the in-line waveguide divider to the in-line waveguide combiner, and the entire surface of the amplification boards at the in-line waveguide combiner side is covered with the electrically conductive amplifier cover except openings and openings. Each of the amplification boards includes a waveguide-to-microstrip transition corresponding to the opening, an amplifier element, and a microstrip-to-waveguide transition corresponding to the opening.
公开/授权文献
- US20170244370A1 HIGH-FREQUENCY POWER AMPLIFIER 公开/授权日:2017-08-24
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