Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15641336Application Date: 2017-07-05
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Publication No.: US09922974B2Publication Date: 2018-03-20
- Inventor: Chia Chang Hsu , Chun-Hsien Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW104128258A 20150828
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/66 ; H01L21/02 ; H01L21/768 ; H01L29/40 ; H01L21/8234 ; H01L23/485
Abstract:
A method for fabricating semiconductor device includes the steps of: providing a substrate having a gate structure thereon; forming a silicon layer on the substrate to cover the gate structure entirely; planarizing the silicon layer; and performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate.
Public/Granted literature
- US20170301670A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-10-19
Information query
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