Invention Grant
- Patent Title: Gallium nitride apparatus with a trap rich region
-
Application No.: US15165122Application Date: 2016-05-26
-
Publication No.: US09923060B2Publication Date: 2018-03-20
- Inventor: Shrenik Deliwala , James Fiorenza , Donghyun Jin
- Applicant: Analog Devices, Inc.
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/02 ; H01L21/322 ; H01L21/324 ; H01L21/205 ; H01L21/268 ; H01L29/15 ; H01L29/205 ; H01L29/778
Abstract:
A method cold-melts a high conductivity region between a high-resistivity silicon substrate and a gallium-nitride layer to form a trap rich region that substantially immobilizes charge carriers in that region. Such a process should substantially mitigate the parasitic impact of that region on circuits formed at least in part by the gallium-nitride layer.
Public/Granted literature
- US20160351666A1 Gallium Nitride Apparatus with a Trap Rich Region Public/Granted day:2016-12-01
Information query
IPC分类:
