Invention Grant
- Patent Title: Thermal metal ground for integrated circuit resistors
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Application No.: US14181187Application Date: 2014-02-14
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Publication No.: US09930769B2Publication Date: 2018-03-27
- Inventor: Arpit Mittal , Alvin Leng Sun Loke , Mehdi Saeidi , Patrick Drennan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H05K1/02 ; H01C1/08 ; H01C1/01 ; H01L49/02 ; H01C1/084 ; H01L23/522 ; H01L23/367

Abstract:
Metal thermal grounds are used for dissipating heat from integrated-circuit resistors. The resistors may be formed using a front end of line layer, for example, a titanium-nitride layer. A metal region (e.g., in a first metal layer) is located over the resistors to form a heat sink. An area of thermal posts connected to the metal region is also located over the resistor. The metal region can be connected to the substrate of the integrated circuit to provide a low impedance thermal path out of the integrated circuit.
Public/Granted literature
- US20150237709A1 THERMAL METAL GROUND FOR INTEGRATED CIRCUIT RESISTORS Public/Granted day:2015-08-20
Information query
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