- 专利标题： Graphene nanomesh based charge sensor
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申请号： US14699329申请日： 2015-04-29
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公开(公告)号： US09933420B2公开(公告)日： 2018-04-03
- 发明人: Ali Afzali-Ardakani , Shu-jen Han , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Razvan Nistor , Hsinyu Tsai
- 申请人： International Business Machines Corporation , Egypt Nanotechnologies Center (EGNC)
- 申请人地址： US NY Armonk EG Cairo
- 专利权人： International Business Machines Corporation,Egypt Nanotechnology Center
- 当前专利权人： International Business Machines Corporation,Egypt Nanotechnology Center
- 当前专利权人地址： US NY Armonk EG Cairo
- 代理机构： Ryan, Mason & Lewis, LLP
- 主分类号： G01N33/53
- IPC分类号： G01N33/53 ; G01N33/531 ; H01L21/30 ; C40B60/04
摘要：
A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene to create a graphene nanomesh with a patterned array of multiple holes; passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh; and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, wherein the receptor is a molecule that chemically binds to the target molecule, irrespective of the size of the target molecule.
公开/授权文献
- US20150233900A1 Graphene Nanomesh Based Charge Sensor 公开/授权日：2015-08-20
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