公开(公告)号：US20150233900A1

公开(公告)日：2015-08-20

申请号：US14699329

申请日：2015-04-29

申请人： International Business Machines Corporation ,  Egypt Nanotechnologies Center (EGNC)

发明人： Ali Afzali-Ardakani ,  Shu-jen Han ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Razvan Nistor ,  Hsinyu Tsai

IPC分类号： G01N33/531 ,  H01L21/30

CPC分类号： G01N33/531 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  G01N33/5308 ,  G01N33/54373 ,  G01N33/54393 ,  G01N33/551 ,  G01N2400/00 ,  H01L21/30

摘要： A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene to create a graphene nanomesh with a patterned array of multiple holes; passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh; and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, wherein the receptor is a molecule that chemically binds to the target molecule, irrespective of the size of the target molecule.

摘要翻译： 一种基于石墨烯纳米薄膜的电荷传感器和用于生产基于石墨烯纳米薄膜的电荷传感器的方法。 该方法包括在石墨烯中产生多个孔以产生具有多个孔的图案化阵列的石墨烯纳米粒子; 钝化石墨烯纳米颗粒的多个孔中的每一个的边缘以允许石墨烯纳米颗粒的官能化; 并且利用促进目标分子的受体与多个孔中的一个或多个的边缘的化学结合的化学化合物使石墨烯纳米粒子的每个多孔的钝化边缘功能化，其中受体是化学上分解的分子 与目标分子结合，不考虑靶分子的大小。

公开(公告)号：US09933420B2

公开(公告)日：2018-04-03

申请号：US14699329

申请日：2015-04-29

申请人： International Business Machines Corporation ,  Egypt Nanotechnologies Center (EGNC)

发明人： Ali Afzali-Ardakani ,  Shu-jen Han ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Razvan Nistor ,  Hsinyu Tsai

IPC分类号： G01N33/53 ,  G01N33/531 ,  H01L21/30 ,  C40B60/04

CPC分类号： G01N33/531 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  G01N33/5308 ,  G01N33/54373 ,  G01N33/54393 ,  G01N33/551 ,  G01N2400/00 ,  H01L21/30

摘要： A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene to create a graphene nanomesh with a patterned array of multiple holes; passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh; and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, wherein the receptor is a molecule that chemically binds to the target molecule, irrespective of the size of the target molecule.

公开(公告)号：US09766229B2

公开(公告)日：2017-09-19

申请号：US14699318

申请日：2015-04-29

申请人： International Business Machines Corporation ,  Egypt Nanotechnologies Center (EGNC)

发明人： Ali Afzali-Ardakani ,  Shu-jen Han ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Razvan Nistor ,  Hsinyu Tsai

IPC分类号： B82Y30/00 ,  C01B31/04 ,  C40B60/10 ,  G01N33/543 ,  G01N33/551 ,  G01N33/53 ,  B82Y40/00

CPC分类号： G01N33/531 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  G01N33/5308 ,  G01N33/54373 ,  G01N33/54393 ,  G01N33/551 ,  G01N2400/00 ,  H01L21/30

摘要： A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. A graphene nanomesh based charge sensor includes a graphene nanomesh with a patterned array of multiple holes created by generating multiple holes in graphene in a periodic way, wherein: an edge of each of the multiple holes of the graphene nanomesh is passivated; and the passivated edge of each of the multiple holes of the graphene nanomesh is functionalized with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.

公开(公告)号：US20150276726A1

公开(公告)日：2015-10-01

申请号：US14699318

申请日：2015-04-29

申请人： International Business Machines Corporation ,  Egypt Nanotechnologies Center (EGNC)

发明人： Ali Afzali-Ardakani ,  Shu-jen Han ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Razvan Nistor ,  Hsinyu Tsai

IPC分类号： G01N33/53 ,  G01N33/543 ,  G01N33/551

CPC分类号： G01N33/531 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  G01N33/5308 ,  G01N33/54373 ,  G01N33/54393 ,  G01N33/551 ,  G01N2400/00 ,  H01L21/30

摘要： A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. A graphene nanomesh based charge sensor includes a graphene nanomesh with a patterned array of multiple holes created by generating multiple holes in graphene in a periodic way, wherein: an edge of each of the multiple holes of the graphene nanomesh is passivated; and the passivated edge of each of the multiple holes of the graphene nanomesh is functionalized with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.

摘要翻译： 一种基于石墨烯纳米薄膜的电荷传感器和用于生产基于石墨烯纳米薄膜的电荷传感器的方法。 基于石墨烯纳米薄膜的电荷传感器包括石墨烯纳米薄膜，其具有通过以周期性方式在石墨烯中产生多个孔而产生的多个孔的图案化阵列，其中：所述石墨烯纳米粒子的每个多孔的边缘被钝化; 并且利用促进靶分子的受体与多个孔中的一个或多个的边缘的化学结合的化学化合物对石墨烯纳米粒子的多个孔中的每一个的钝化边缘进行功能化，从而允许靶分子结合 该受体导致电荷转移到石墨烯纳米颗粒以产生用于靶分子的基于石墨烯纳米膜的电荷传感器。

公开(公告)号：US10416965B2

公开(公告)日：2019-09-17

申请号：US16038702

申请日：2018-07-18

申请人： International Business Machines Corporation

发明人： Chia-yu Chen ,  Damon Farmer ,  Suyog Gupta ,  Shu-jen Han

IPC分类号： G06F7/58 ,  H01L29/423

摘要： A method (and system) for generating random numbers includes setting a drain voltage Vd on an MOSFET (metal oxide semiconductor field effect transistor) device and a gate voltage Vg of the MOSFET device so that the MOSFET device comprises a noise source configured in a manner such as to tune as desired a random number statistical distribution of an output of the MOSFET device. An output voltage of the MOSFET is provided as an input signal into a low noise amplifier and an output voltage of the low noise amplifier provides values for a random number generator.

公开(公告)号：US20160099332A1

公开(公告)日：2016-04-07

申请号：US14968471

申请日：2015-12-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Dechao Guo ,  Wilfried E. Haensch ,  Shu-jen Han ,  Daniel J. Jaeger ,  Yu Lu ,  Keith Kwong Hon Wong

IPC分类号： H01L29/49 ,  H01L29/78 ,  H01L29/45

CPC分类号： H01L29/4925 ,  H01L21/28052 ,  H01L29/42372 ,  H01L29/456 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

摘要： A gate structure in a semiconductor device includes: a gate stack formed on a substrate with three sections, a bottom portion, a top portion, and a sacrificial cap layer over the top portion; gate spacers, source and drain regions, a nitride encapsulation over top and sidewalls of the gate stack after removal of the sacrificial cap layer, an organic planarizing layer over the nitride encapsulation, planarizing the encapsulation, and silicidation performed over the source and drain regions and the bottom portion after removal of the nitride encapsulation, the organic planarizing layer, and the top portion of the gate stack.

公开(公告)号：US20180341462A1

公开(公告)日：2018-11-29

申请号：US16038702

申请日：2018-07-18

申请人： International Business Machines Corporation

发明人： Chia-yu Chen ,  Damon Farmer ,  Suyog Gupta ,  Shu-jen Han

IPC分类号： G06F7/58 ,  H01L29/423

CPC分类号： G06F7/582 ,  G06F7/588 ,  H01L29/42324

摘要： A method (and system) for generating random numbers includes setting a drain voltage Vd on an MOSFET (metal oxide semiconductor field effect transistor) device and a gate voltage Vg of the MOSFET device so that the MOSFET device comprises a noise source configured in a manner such as to tune as desired a random number statistical distribution of an output of the MOSFET device. An output voltage of the MOSFET is provided as an input signal into a low noise amplifier and an output voltage of the low noise amplifier provides values for a random number generator.

公开(公告)号：US09853116B2

公开(公告)日：2017-12-26

申请号：US14968471

申请日：2015-12-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Dechao Guo ,  Wilfried E. Haensch ,  Shu-jen Han ,  Daniel J. Jaeger ,  Yu Lu ,  Keith Kwong Hon Wong

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L29/49 ,  H01L29/66 ,  H01L29/423 ,  H01L29/45 ,  H01L21/28 ,  H01L29/78

CPC分类号： H01L29/4925 ,  H01L21/28052 ,  H01L29/42372 ,  H01L29/456 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

摘要： A gate structure in a semiconductor device includes: a gate stack formed on a substrate with three sections, a bottom portion, a top portion, and a sacrificial cap layer over the top portion; gate spacers, source and drain regions, a nitride encapsulation over top and sidewalls of the gate stack after removal of the sacrificial cap layer, an organic planarizing layer over the nitride encapsulation, planarizing the encapsulation, and silicidation performed over the source and drain regions and the bottom portion after removal of the nitride encapsulation, the organic planarizing layer, and the top portion of the gate stack.

公开(公告)号：US09287516B2

公开(公告)日：2016-03-15

申请号：US14618618

申请日：2015-02-10

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Qing Cao ,  Shu-jen Han

IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  H01L29/06 ,  H01L21/02

CPC分类号： H01L51/0541 ,  H01L21/02606 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L51/002 ,  H01L51/0048 ,  H01L51/0508 ,  H01L51/0516 ,  H01L51/0525 ,  H01L51/0558 ,  H01L51/105 ,  H01L2221/1094 ,  H01L2251/303

摘要： A carbon nanotube transistor and method of manufacturing a carbon nanotube transistor is disclosed. The carbon nanotube transistor includes a carbon nanotube on a substrate, a gate electrode deposited on the carbon nanotube, and at least one of a source electrode and a drain electrode deposited on the carbon nanotube and separated from the gate electrode by a space region. The carbon nanotube is doped at the gate electrode an in the space region to form a p-n junction.

公开(公告)号：US20140217481A1

公开(公告)日：2014-08-07

申请号：US13757809

申请日：2013-02-03

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Dechao Guo ,  Wilfried E. Haensch ,  Shu-jen Han ,  Daniel J. Jaeger ,  Yu Lu ,  Keith Kwong Hon Wong

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/4925 ,  H01L21/28052 ,  H01L29/42372 ,  H01L29/456 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

摘要： A gate structure in a semiconductor device includes: a gate stack formed on a substrate with three sections: a bottom portion, a top portion, and a sacrificial cap layer over the top portion; gate spacers; source and drain regions; a nitride encapsulation over top and sidewalls of the gate stack after removal of the sacrificial cap layer; an organic planarizing layer over the nitride encapsulation, planarizing the encapsulation; and silicidation performed over the source and drain regions and the bottom portion after removal of the nitride encapsulation, the organic planarizing layer, and the top portion of the gate stack.

摘要翻译： 半导体器件中的栅极结构包括：形成在具有三个部分的基底上的栅极堆叠：顶部上的底部，顶部和牺牲帽层; 门间隔; 源和漏区; 在除去牺牲帽层之后，在栅极堆叠的顶部和侧壁上的氮化物封装; 在氮化物封装之上的有机平面化层，平坦化封装; 并且在除去氮化物封装，有机平坦化层和栅极堆叠的顶部之后在源极和漏极区域和底部部分上进行硅化。