Invention Grant
- Patent Title: Asymmetrically selecting memory elements
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Application No.: US15320779Application Date: 2014-07-25
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Publication No.: US09934849B2Publication Date: 2018-04-03
- Inventor: Kyung Min Kim , Jianhua Yang , Zhiyong Li
- Applicant: Hewlett Packard Enterprise Development LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Mannava & Kang, P.C.
- International Application: PCT/US2014/048306 WO 20140725
- International Announcement: WO2016/014089 WO 20160128
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00

Abstract:
A system for asymmetrically selecting a memory element is described. The system includes a number of memory cells in a crossbar array. Each memory cell includes a memory element to store information. The memory element is defined as an intersection between a column electrode and a row electrode of the crossbar array. Each memory cell also includes a selector to select a target memory element by relaying a first selecting voltage to a column electrode that corresponds to the target memory element and relaying a second selecting voltage to a row electrode that corresponds to the target memory element. The system also includes a controller to pass a first standing voltage to column electrodes of the crossbar array and to pass a second standing voltage to row electrodes of the crossbar array. The first standing voltage is different than the second standing voltage.
Public/Granted literature
- US20170200493A1 ASYMMETRICALLY SELECTING MEMORY ELEMENTS Public/Granted day:2017-07-13
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