Invention Grant
- Patent Title: Activation chamber, kit used in treatment device and treatment device, for lowering electron affinity
-
Application No.: US14904945Application Date: 2014-06-12
-
Publication No.: US09934926B2Publication Date: 2018-04-03
- Inventor: Tomohiro Nishitani
- Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Applicant Address: JP Aichi
- Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Current Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Current Assignee Address: JP Aichi
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-147682 20130716
- International Application: PCT/JP2014/065606 WO 20140612
- International Announcement: WO2015/008561 WO 20150122
- Main IPC: H01J1/34
- IPC: H01J1/34 ; H01J37/06 ; H01J37/073

Abstract:
The present disclosure provides a treatment device for lowering electron affinity. The treatment device is capable of performing an electron affinity (EA) surface treatment on a photocathode material or an EA surface retreatment on a photocathode. The present disclosure also provides an electron-beam device provided with the treatment device. An activation chamber is used in a treatment device for lowering electron affinity by vaporizing a surface-treatment material and uses the vaporized surface-treatment material to perform an electron-affinity lowering treatment on a photocathode material or an electron-affinity lowering retreatment on a photocathode. The activation chamber includes one or more holes through which electrons can pass.
Information query