- 专利标题： Semiconductor memory device
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申请号： US15462118申请日： 2017-03-17
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公开(公告)号： US09935118B1公开(公告)日： 2018-04-03
- 发明人: Takuya Inatsuka , Tadashi Iguchi , Murato Kawai , Hisashi Kato , Megumi Ishiduki
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Minato-ku
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L27/11565
- IPC分类号： H01L27/11565 ; H01L27/11524 ; H01L27/11556 ; H01L27/11519 ; H01L27/1157 ; H01L27/11582
摘要：
According to one embodiment, a semiconductor memory device includes a first conductive layer, a first semiconductor body, a second semiconductor body, a first memory layer, and a second memory layer. The first conductive layer includes first to fourth extension regions, and a first connection region. The first extension region extends in a first direction. The second extension region extends in the first direction and is arranged with the first extension region in the first direction. The third extension region extends in the first direction and is arranged with the first extension region in a second direction crossing the first direction. The fourth extension region extends in the first direction, is arranged with the third extension region in the first direction, and is arranged with the second extension region in the second direction.
公开/授权文献
- US20180076211A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2018-03-15
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