Invention Grant
- Patent Title: Capacitor with a dielectric between a via and a plate of the capacitor
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Application No.: US13833632Application Date: 2013-03-15
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Publication No.: US09935166B2Publication Date: 2018-04-03
- Inventor: Je-Hsiung Lan , Chengjie Zuo , Changhan Yun , David F. Berdy , Daeik D. Kim , Robert P. Mikulka , Mario Francisco Velez , Jonghae Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated-Toler
- Main IPC: H05K1/16
- IPC: H05K1/16 ; H01L49/02 ; G06F17/50 ; H01L23/498 ; H01L27/01 ; H01L23/15 ; H01L27/12
Abstract:
In a particular embodiment, a device includes a substrate, a via that extends at least partially through the substrate, and a capacitor. A dielectric of the capacitor is located between the via and a plate of the capacitor, and the plate of the capacitor is external to the substrate and within the device.
Public/Granted literature
- US20140268616A1 CAPACITOR WITH A DIELECTRIC BETWEEN A VIA AND A PLATE OF THE CAPACITOR Public/Granted day:2014-09-18
Information query
