- 专利标题： Capacitor with a dielectric between a via and a plate of the capacitor
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申请号： US13833632申请日： 2013-03-15
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公开(公告)号： US09935166B2公开(公告)日： 2018-04-03
- 发明人: Je-Hsiung Lan , Chengjie Zuo , Changhan Yun , David F. Berdy , Daeik D. Kim , Robert P. Mikulka , Mario Francisco Velez , Jonghae Kim
- 申请人： QUALCOMM Incorporated
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理机构： Qualcomm Incorporated-Toler
- 主分类号： H05K1/16
- IPC分类号： H05K1/16 ; H01L49/02 ; G06F17/50 ; H01L23/498 ; H01L27/01 ; H01L23/15 ; H01L27/12
摘要：
In a particular embodiment, a device includes a substrate, a via that extends at least partially through the substrate, and a capacitor. A dielectric of the capacitor is located between the via and a plate of the capacitor, and the plate of the capacitor is external to the substrate and within the device.
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