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公开(公告)号：US20240347913A1
公开(公告)日：2024-10-17
申请号：US18300067
申请日：2023-04-13
发明人： Ranadeep Dutta , Jonghae Kim , Je-Hsiung Lan
CPC分类号： H01Q9/0407 , H01Q1/2283
摘要： An antenna module as a radio-frequency (RF) integrated circuit (IC) semiconductor die (“die”) with an integrated antenna substrate. The die with the integrated antenna substrate can be provided as part of a single IC chip that is fabricated as part of a wafer-level fabrication process as an example. The antenna elements are formed in one more antenna layers as part of an antenna substrate. The antenna layers may be formed as re-distribution layers (RDLs) for example to support smaller line-spacing (LS) and/or smaller pitched metal interconnects for forming and interconnecting to smaller wavelength antenna elements for supporting higher frequency communications. The antenna substrate is formed on a semiconductor wafer of an IC as part of the die. In this manner, the antenna layers can be formed as part of a wafer-level fabrication process used to form the die to form the antenna layers.
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公开(公告)号：US12046530B2
公开(公告)日：2024-07-23
申请号：US17558508
申请日：2021-12-21
发明人： Je-Hsiung Lan , Jonghae Kim , Ranadeep Dutta
IPC分类号： H01L21/48 , H01L23/367 , H01L25/00 , H01L25/065
CPC分类号： H01L23/3677 , H01L21/4871 , H01L25/0655 , H01L25/50
摘要： Disclosed are apparatuses and techniques for fabricating an apparatus including a semiconductor device. The semiconductor device may include: a die, a thermally conductive interface that includes a thermal bridge interposer (THBI) structure, and a substrate. The die is coupled to the substrate by the thermally conductive interface and at least a portion of the die is coupled to the substrate by the THBI structure.
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公开(公告)号：US20230268637A1
公开(公告)日：2023-08-24
申请号：US17652328
申请日：2022-02-24
发明人： Ranadeep Dutta , Jonghae Kim , Je-Hsiung Lan
IPC分类号： H01Q1/22 , H01L23/367 , H01L23/31 , H01L23/538 , H01L23/552 , H01L23/66 , H01L23/00 , H01L25/10 , H01L21/48 , H01L21/56 , H01L25/00
CPC分类号： H01Q1/2283 , H01L23/3672 , H01L23/3121 , H01L23/5383 , H01L23/5386 , H01L23/5389 , H01L23/552 , H01L23/66 , H01L24/20 , H01L25/105 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L24/19 , H01L25/50 , H01L2223/6616 , H01L2223/6677 , H01L2224/214 , H01L2225/1035 , H01L2225/107 , H01L2225/1094
摘要： Antenna modules employing three-dimensional (3D) build-up on mold package to support efficient integration of radio-frequency (RF) circuitry, and related fabrication methods. The antenna module includes a RF transceiver whose circuitry is split over multiple semiconductor dies (“dies”) so different semiconductor devices can be formed in different semiconductor structures. The antenna module is provided as a 3D build-up on mold package to reduce lengths of die-to-die (D2D) interconnections between circuits in different dies. First and second die packages that include respective first and second dies encapsulated in respective first and second mold layers are coupled to each other in a vertical direction in a 3D stacked arrangement with active faces of the first and second dies facing each other to provide a reduced distance between the active faces of the first and second dies. An antenna is stacked on the second die package to provide an antenna(s) for the antenna module.
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公开(公告)号：US10038422B2
公开(公告)日：2018-07-31
申请号：US15247803
申请日：2016-08-25
发明人： Changhan Hobie Yun , Je-Hsiung Lan , Chengjie Zuo , David Berdy , Jonghae Kim , Mario Velez , Niranjan Sunil Mudakatte , Shiqun Gu
IPC分类号： H03H9/205 , H03H3/04 , H01L41/332 , H03H9/54 , H03H3/02
CPC分类号： H03H9/205 , H01L41/332 , H03H3/04 , H03H9/173 , H03H9/54 , H03H2003/021 , H03H2003/0435 , H03H2003/0442 , H03H2003/0471
摘要： A single-die multi-FBAR (film bulk acoustic resonator) device includes multiple FBARs having different resonant frequencies formed over a single substrate. The FBARs include piezoelectric layers having different thicknesses but with upper electrodes formed at a same height over the substrate, lower electrodes at different heights over the substrate, and different sized air gaps separating the lower electrodes from the substrate.
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公开(公告)号：US09331665B2
公开(公告)日：2016-05-03
申请号：US13887568
申请日：2013-05-06
发明人： Chengjie Zuo , Daeik D. Kim , Je-Hsiung Lan , Jonghae Kim , Mario Francisco Velez , Changhan Yun , David F. Berdy , Robert P. Mikulka , Matthew M. Nowak , Xiangdong Zhang , Puay H. See
IPC分类号： H03H7/46
摘要： Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) are disclosed. In one embodiment, the tunable diplexer may be formed by providing one of either a varactor or a variable inductor in the diplexer. The variable nature of the varactor or the variable inductor allows a notch in the diplexer to be tuned so as to select a band stop to eliminate harmonics at a desired frequency as well as control the cutoff frequency of the pass band. By stacking the elements of the diplexer into three dimensions, space is conserved and a variety of varactors and inductors are able to be used.
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公开(公告)号：US20150061813A1
公开(公告)日：2015-03-05
申请号：US14155244
申请日：2014-01-14
发明人： Daeik Daniel Kim , Chengjie Zuo , Changhan Hobie Yun , Mario Francisco Velez , Robert Paul Mikulka , Xiangdong Zhang , Jonghae Kim , Je-Hsiung Lan
CPC分类号： H01F41/041 , H01F17/0013 , H01F27/2804 , H01F41/042 , H01F2017/0053 , H01F2017/0073 , H01F2027/2809
摘要： A particular device includes a substrate and a spiral inductor coupled to the substrate. The spiral inductor includes a first conductive spiral and a second conductive spiral overlaying the first conductive spiral. A first portion of an innermost turn of the spiral inductor has a first thickness in a direction perpendicular to the substrate. The first portion of the innermost turn includes a first portion of the first conductive spiral and does not include the second conductive spiral. A second portion of the innermost turn includes a first portion of the second conductive spiral. A portion of an outermost turn of the spiral inductor has a second thickness in the direction perpendicular to the substrate that is greater than the first thickness. A portion of the outermost turn includes a second portion of the first conductive spiral and a second portion of the second conductive spiral.
摘要翻译： 特定器件包括衬底和耦合到衬底的螺旋电感器。 螺旋电感器包括覆盖第一导电螺旋的第一导电螺旋和第二导电螺旋。 螺旋电感器的最内圈的第一部分在垂直于衬底的方向上具有第一厚度。 最内圈的第一部分包括第一导电螺旋的第一部分，并且不包括第二导电螺旋。 最内圈的第二部分包括第二导电螺旋的第一部分。 螺旋电感器的最外圈的一部分在垂直于衬底的方向上具有大于第一厚度的第二厚度。 最外圈的一部分包括第一导电螺旋的第二部分和第二导电螺旋的第二部分。
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公开(公告)号：US08922974B2
公开(公告)日：2014-12-30
申请号：US13751977
申请日：2013-01-28
发明人： Je-Hsiung Lan , Evgeni P Gousev , Wenyue Zhang , Manish Kothari , Sang-June Park
CPC分类号： H01G7/00 , H01G5/16 , H01P1/127 , Y10T29/435
摘要： Tunable MEMS resonators having adjustable resonance frequency and capable of handling large signals are described. In one exemplary design, a tunable MEMS resonator includes (i) a first part having a cavity and a post and (ii) a second part mated to the first part and including a movable layer located under the post. Each part may be covered with a metal layer on the surface facing the other part. The movable plate may be mechanically moved by a DC voltage to vary the resonance frequency of the MEMS resonator. The cavity may have a rectangular or circular shape and may be empty or filled with a dielectric material. The post may be positioned in the middle of the cavity. The movable plate may be attached to the second part (i) via an anchor and operated as a cantilever or (ii) via two anchors and operated as a bridge.
摘要翻译： 描述了具有可调谐共振频率并且能够处理大信号的可调谐MEMS谐振器。 在一个示例性设计中，可调谐MEMS谐振器包括（i）具有空腔和柱的第一部分和（ii）与第一部分配合并且包括位于柱下方的可移动层的第二部分。 每个部分可以在面向另一部分的表面上被金属层覆盖。 可移动板可通过DC电压机械地移动以改变MEMS谐振器的谐振频率。 空腔可以具有矩形或圆形形状，并且可以是空的或者用电介质材料填充。 柱可以位于腔的中间。 可移动板可以经由锚固件附接到第二部件（i）并作为悬臂操作，或者（ii）经由两个锚定件并作为桥梁操作。
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8.发明申请TUNABLE DIPLEXERS IN THREE-DIMENSIONAL (3D) INTEGRATED CIRCUITS (IC) (3DIC) AND RELATED COMPONENTS AND METHODS 有权三维（3D）集成电路（IC）（3DIC）及相关组件和方法中的可执行程序公开(公告)号：US20140327496A1
公开(公告)日：2014-11-06
申请号：US13887568
申请日：2013-05-06
发明人： Chengjie Zuo , Daeik D. Kim , Je-Hsiung Lan , Jonghae Kim , Mario Francisco Velez , Changhan Yun , David F. Berdy , Robert P. Mikulka , Matthew M. Nowak , Xiangdong Zhang , Puay H. See
CPC分类号： H03H7/461 , H03H3/00 , H03H7/0115 , H03H7/463 , Y10T29/49016
摘要： Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) are disclosed. In one embodiment, the tunable diplexer may be formed by providing one of either a varactor or a variable inductor in the diplexer. The variable nature of the varactor or the variable inductor allows a notch in the diplexer to be tuned so as to select a band stop to eliminate harmonics at a desired frequency as well as control the cutoff frequency of the pass band. By stacking the elements of the diplexer into three dimensions, space is conserved and a variety of varactors and inductors are able to be used.
摘要翻译： 公开了三维（3D）集成电路（IC）（3DIC）中的可调谐双工器。 在一个实施例中，可调谐双工器可以通过在双工器中提供变容二极管或可变电感器之一来形成。 可变电抗器或可变电感器的可变特性允许调谐双工器中的陷波，以便选择频带停止以消除期望频率处的谐波以及控制通带的截止频率。 通过将双工器的元件堆叠成三维空间是保守的，并且可以使用各种变容二极管和电感器。
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9.发明申请INTEGRATION OF A REPLICA CIRCUIT AND A TRANSFORMER ABOVE A DIELECTRIC SUBSTRATE 有权复合电路和变压器在电介质基板上的集成公开(公告)号：US20140266494A1
公开(公告)日：2014-09-18
申请号：US13829784
申请日：2013-03-14
发明人： Je-Hsiung Lan , Chi Shun Lo , Jonghae Kim , Mario Francisco Velez , John H. Hong
CPC分类号： H03H11/28 , H01F41/02 , H01F2019/085 , H01F2027/2809 , H01L23/5227 , H01L23/645 , H01L23/66 , H01L27/1218 , H01L27/1225 , H01L27/1255 , H01L27/1259 , H01L27/13 , H01L28/10 , H01L2223/6655 , H01L2223/6672 , H01L2223/6677 , H01L2924/0002 , H01L2924/30111 , H01L2924/00
摘要： A particular device includes a replica circuit disposed above a dielectric substrate. The replica circuit includes a thin film transistor (TFT) configured to function as a variable capacitor or a variable resistor. The device further includes a transformer disposed above the dielectric substrate and coupled to the replica circuit. The transformer is configured facilitate an impedance match between the replica circuit and an antenna.
摘要翻译： 特定装置包括设置在电介质基板上方的复制电路。 复制电路包括被配置为用作可变电容器或可变电阻器的薄膜晶体管（TFT）。 该装置还包括设置在电介质基板上方并耦合到复制电路的变压器。 变压器配置有助于复制电路和天线之间的阻抗匹配。
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公开(公告)号：US11594804B2
公开(公告)日：2023-02-28
申请号：US16910025
申请日：2020-06-23
发明人： Je-Hsiung Lan , Sang-June Park , Jonghae Kim
摘要： Disclosed is an antenna on glass (AOG) device having an air cavity at least partially formed in a photosensitive glass substrate. An air cavity structure is at least partially encloses the air cavity and wherein the air cavity structure at least partially formed from the photosensitive glass substrate. An antenna is formed from portion of a top conductive layer disposed on a top surface of the air cavity structure and at least partially overlapping the air cavity. A metallization structure is provided having a bottom conductive layer disposed on a bottom surface of the air cavity structure, wherein the bottom conductive layer is electrically coupled to the top metal layer by a conductive pillar disposed through the photosensitive glass substrate. In addition, the AOG device may integrate one or more MIM capacitors and/or inductors that allow for RF filtering and impedance matching.
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