Invention Grant
- Patent Title: Leakage-aware activation control of a delayed keeper circuit for a dynamic read operation in a memory bit cell
-
Application No.: US15085187Application Date: 2016-03-30
-
Publication No.: US09940992B2Publication Date: 2018-04-10
- Inventor: Francois Ibrahim Atallah , Hoan Huu Nguyen , Keith Alan Bowman
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: W&T/Qualcomm
- Main IPC: G11C8/08
- IPC: G11C8/08 ; G11C11/419 ; G11C7/12 ; G11C7/22 ; G11C8/10 ; G11C7/06

Abstract:
Leakage-aware activation control of a delayed keeper circuit for a dynamic read operation in a memory bit cell is disclosed. In one aspect, a leakage-aware activation control circuit is provided for a dynamic read circuit configured to perform read operations on a memory bit cell. To prevent or mitigate contention between the delayed keeper circuit and a read port circuit in the dynamic read circuit pulling a dynamic node to opposite voltage levels when a read operation is initiated, the leakage-aware activation control circuit is configured to adaptively control activation timing of the delayed keeper circuit based on a comparison of N-type Field-Effect Transistor (NFET) leakage current to P-type FET (PFET) leakage current. In this manner, the leakage-aware activation control circuit can adaptively adjust the activation timing of the delayed keeper circuit based on the actual relative strengths of NFETs and PFETs.
Public/Granted literature
Information query