Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US15273495Application Date: 2016-09-22
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Publication No.: US09941321B2Publication Date: 2018-04-10
- Inventor: Hiroyasu Matsugai , Kiyotaka Tabuchi
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2011-071043 20110328
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/66 ; H01L21/768 ; H01L23/00 ; H01L25/065 ; H01L25/00 ; H01L27/06
Abstract:
A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, a first main surface side of the first semiconductor substrate and a first main surface side of the second semiconductor substrate being bonded to each other; and a warpage correction layer which is formed on at least one or more selected from the first main surface side of the first semiconductor substrate, the first main surface side of the second semiconductor substrate, a second main surface side of the first semiconductor substrate, and a second main surface side of the second semiconductor substrate.
Public/Granted literature
- US20170012074A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-01-12
Information query
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