- 专利标题： JFET and method for fabricating the same
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申请号： US15492805申请日： 2017-04-20
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公开(公告)号： US09941356B1公开(公告)日： 2018-04-10
- 发明人: Wen-Hsin Lin , Shin-Cheng Lin , Cheng-Tsung Wu , Yu-Hao Ho
- 申请人： Vanguard International Semiconductor Corporation
- 申请人地址： TW Hsinchu
- 专利权人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L31/112 ; H01L29/10 ; H01L29/808 ; H01L29/66 ; H01L21/265 ; H01L21/324 ; H01L21/225
摘要：
A junction field effect transistor includes a substrate and a gate region having a first conductive type in the substrate. Source/drain regions of a second conductive type opposite to the first conductive type are disposed in the substrate on opposite sides of the gate region. A pair of high-voltage well regions of the second conductive type are disposed beneath the source/drain regions. A channel region is provided beneath the gate region and between the pair of high-voltage well regions. The channel region is of the second conductive type and has a dopant concentration lower than that of the pair of high-voltage well regions.
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