Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US15380148Application Date: 2016-12-15
-
Publication No.: US09941832B2Publication Date: 2018-04-10
- Inventor: Kenji Amada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-242183 20121101
- Main IPC: H02M7/5387
- IPC: H02M7/5387 ; H02P27/06 ; H01L27/092 ; B60L3/00

Abstract:
A semiconductor device includes an H-Bridge driver. The H-Bridge driver includes a first island on which a first power transistor and a second power transistor are mounted; a second island on which a third power transistor and a fourth power transistor are mounted; a third island on which a control circuit and a protection power transistor are mounted, the control circuit being configured to control the first, second, third and fourth power transistors, wherein the third island is allocated between the first island and the second island.
Public/Granted literature
- US20170099024A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-04-06
Information query
IPC分类: