Invention Grant
- Patent Title: Magnetic sensor using inverse spin hall effect
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Application No.: US15385595Application Date: 2016-12-20
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Publication No.: US09947347B1Publication Date: 2018-04-17
- Inventor: Petrus Antonius Van Der Heijden , Quang Le , Kuok San Ho , Xiaoyong Liu , Gonçalo Marcos Baião De Albuquerque
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA Irvine
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA Irvine
- Agency: Foley & Lardner LLP
- Main IPC: G11B5/37
- IPC: G11B5/37 ; G01R33/07 ; G11B5/127

Abstract:
A magnetic sensor that generates a signal based on inverse spin Hall effect. The sensor includes a magnetic free layer and a non-magnetic, electrically conductive spin Hall layer located adjacent to the magnetic free layer. Circuitry is configured to supply an electrical current that travels through the magnetic free layer and the spin Hall layer in a direction that is generally perpendicular to the plane of the layers or perpendicular to a plane defined by an interface between the magnetic free layer and the spin Hall layer. The inverse spin Hall effect causes an electrical voltage in the spin Hall layer as a result of the current, and the voltage changes relative to the orientation of magnetization of the magnetic free layer. Circuitry is provided for measuring the voltage in the spin Hall layer in a direction that is generally perpendicular to the direction of the electrical current.
Information query
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