Invention Grant
- Patent Title: Integrated superconductor device and method of fabrication
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Application No.: US14077901Application Date: 2013-11-12
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Publication No.: US09947441B2Publication Date: 2018-04-17
- Inventor: Connie P. Wang , Paul Murphy , Paul Sullivan
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L39/24
- IPC: H01L39/24 ; H01B12/06 ; H01B13/30 ; H01L39/14 ; H01L39/16 ; H02H9/02

Abstract:
An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer, The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.
Public/Granted literature
- US20150348682A1 INTEGRATED SUPERCONDUCTOR DEVICE AND METHOD OF FABRICATION Public/Granted day:2015-12-03
Information query
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