Invention Grant
- Patent Title: Semiconductor integrated circuit device with a surface and method of manufacturing the same
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Application No.: US15138337Application Date: 2016-04-26
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Publication No.: US09947546B2Publication Date: 2018-04-17
- Inventor: Jae Hee Sim , Min Seok Son , Keun Kyu Kong , Jeong Hoon An
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc
- Current Assignee: SK hynix Inc
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2016-0006368 20160119
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/306 ; H01L21/324 ; H01L21/308
Abstract:
A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.
Public/Granted literature
- US20170207098A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH A SURFACE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-07-20
Information query
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