公开(公告)号：US09796001B2

公开(公告)日：2017-10-24

申请号：US14927292

申请日：2015-10-29

Applicant: SK hynix Inc.

Inventor： Jae Hee Sim ,  Si Hyun Kim

IPC: B08B6/00 ,  H01L21/02 ,  H01L21/67

CPC classification number: B08B6/00 ,  H01L21/02057 ,  H01L21/0209 ,  H01L21/67028

Abstract: A wafer processing apparatus includes a particle charger for charging particles adsorbed onto a wafer with photoelectrons emitted from an emitter metal layer and a particle remover for applying an electric field to the wafer, which removes the charged particles from the wafer.

公开(公告)号：US20180120707A1

公开(公告)日：2018-05-03

申请号：US15816783

申请日：2017-11-17

Applicant: SK hynix Inc.

Inventor： Sung Jae LEE ,  Keun Kyu Kong ,  Jae Hee Sim ,  Jeong Hoon An ,  Yun Seop Oh

IPC: G03F7/40 ,  H01L21/324 ,  H01L21/027 ,  G03F7/00 ,  G03F7/32 ,  G03F7/16

CPC classification number: G03F7/405 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/32 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/324

Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes a polymer compound containing a hydroxyl group and an ammonium base, and a solvent. The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.

公开(公告)号：US11651968B2

公开(公告)日：2023-05-16

申请号：US17082535

申请日：2020-10-28

Applicant: SK hynix Inc.

Inventor： Ji Sok Lee ,  Sung Koo Lee ,  Jae Hee Sim

IPC: H01L21/3105 ,  H01L21/033

CPC classification number: H01L21/31051 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/0334

Abstract: A method for forming a planarization layer includes: providing a substrate including a trench; coating a pre-thinner over a surface of the trench; forming a gap-filling material in the trench; coating a post-thinner over the gap-filling material; and performing a spinning process to rotate the substrate.

公开(公告)号：US09947546B2

公开(公告)日：2018-04-17

申请号：US15138337

申请日：2016-04-26

Applicant: SK hynix Inc.

Inventor： Jae Hee Sim ,  Min Seok Son ,  Keun Kyu Kong ,  Jeong Hoon An

IPC: H01L29/06 ,  H01L21/306 ,  H01L21/324 ,  H01L21/308

CPC classification number: H01L21/30604 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0271 ,  H01L21/3085 ,  H01L21/32 ,  H01L21/324 ,  H01L29/0657

Abstract: A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.