- Patent Title: Detection substrate and manufacturing method thereof, and detector
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Application No.: US14894865Application Date: 2015-05-15
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Publication No.: US09947713B2Publication Date: 2018-04-17
- Inventor: Lei Zhao
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201510014946 20150112
- International Application: PCT/CN2015/079012 WO 20150515
- International Announcement: WO2016/112608 WO 20160721
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113 ; H01L21/00 ; H01L27/146 ; H01L31/105 ; G01T1/20 ; H01L31/0224 ; H01L31/18

Abstract:
A detection substrate and a manufacturing method thereof, and a detector are provided. The detection substrate comprises a base substrate, a thin film transistor, a PIN photodiode and a scintillation layer. The thin film transistor and the PIN photodiode are provided above a first face of the base substrate and the scintillation layer is provided above a second face of the base substrate. The visible light obtained after the X-ray passes through the scintillation layer is directly irradiated on the PIN photodiode after passing through the base substrate with relative high transmittance, thus preventing intensity of the light irradiated on the PIN photodiode from being weakened, and improving light utilization efficiency of the detection substrate.
Public/Granted literature
- US20160365381A1 DETECTION SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DETECTOR Public/Granted day:2016-12-15
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