- 专利标题： Fin field effect transistor complementary metal oxide semiconductor with dual strained channels with solid phase doping
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申请号： US14925630申请日： 2015-10-28
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公开(公告)号： US09947774B2公开(公告)日： 2018-04-17
- 发明人: Kangguo Cheng , Ruilong Xie , Tenko Yamashita
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC.
- 申请人地址： US NY Armonk KY Grand Cayman
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- 当前专利权人地址： US NY Armonk KY Grand Cayman
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/225 ; H01L29/78
摘要：
A method of forming semiconductor devices that includes forming an oxide that is doped with a punch through dopant on a surface of a first semiconductor material having a first lattice dimension, and diffusing punch through dopant from the oxide into the semiconductor material to provide a punch through stop region. The oxide may then be removed. A second semiconductor material may be formed having a second lattice dimension on the first semiconductor material having the first lattice dimension. A difference between the first lattice dimension and the second lattice dimension forms a strain in the second semiconductor material. A gate structure and source and drain regions are formed on the second semiconductor material.
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