- 专利标题: Sputtering target and/or coil, and process for producing same
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申请号: US13809189申请日: 2011-07-27
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公开(公告)号: US09951412B2公开(公告)日: 2018-04-24
- 发明人: Kenichi Nagata , Nobuhito Makino
- 申请人: Kenichi Nagata , Nobuhito Makino
- 申请人地址: JP Tokyo
- 专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Howson & Howson LLP
- 优先权: JP2010-172408 20100730
- 国际申请: PCT/JP2011/067061 WO 20110727
- 国际公布: WO2012/014921 WO 20120202
- 主分类号: C23C14/00
- IPC分类号: C23C14/00 ; C23C14/34 ; C21D1/74 ; C21D3/06 ; C22C14/00 ; C22F1/00 ; C22F1/18 ; C22C27/02 ; H01J37/34
摘要:
Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 μL/cm2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.
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