Invention Grant
- Patent Title: Multi-step voltage for forming resistive access memory (RRAM) cell filament
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Application No.: US15404087Application Date: 2017-01-11
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Publication No.: US09959927B2Publication Date: 2018-05-01
- Inventor: Feng Zhou , Xian Liu , Nhan Do , Hieu Van Tran , Hung Quoc Nguyen , Mark Reiten , Zhixian Chen , Wang Xinpeng , Guo-Qiang Lo
- Applicant: Silicon Storage Technology, Inc. , Agency For Science, Technology And Research
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Priority: SG10201601703U 20160304
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C13/00 ; H01L45/00
Abstract:
A memory device and method comprising a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes. For each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.
Public/Granted literature
- US20170316823A1 Multi-Step Voltage For Forming Resistive Random Access Memory (RRAM) Cell Filament Public/Granted day:2017-11-02
Information query
