- 专利标题： Electronic device, stacked structure, and manufacturing method of the same
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申请号： US15494680申请日： 2017-04-24
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公开(公告)号： US09966472B2公开(公告)日： 2018-05-08
- 发明人: Junichi Yamaguchi
- 申请人： FUJITSU LIMITED
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 代理机构： Kratz, Quintos & Hanson, LLP
- 优先权： JP2012-108730 20120510
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/786 ; H01L29/16 ; H01L21/78
摘要：
A stacked structure includes: an insulating substrate; a graphene film that is formed on the insulating substrate; and a protective film that is formed on the graphene film and is made of a transition metal oxide, which is, for example, Cr2O3. Thereby, at the time of transfer of the graphene, polymeric materials such as a resist are prevented from directly coming into contact with the graphene and nonessential carrier doping on the graphene caused by a polymeric residue of the resist is suppressed.