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公开(公告)号:US09929237B2
公开(公告)日:2018-03-27
申请号:US14924084
申请日:2015-10-27
申请人: FUJITSU LIMITED
发明人: Junichi Yamaguchi , Shintaro Sato , Hiroko Yamada , Kazuki Tanaka
IPC分类号: H01L29/16 , H01L29/66 , H01L29/786 , H01L21/02 , H01L29/04 , H01L29/06 , C01B32/182 , C01B32/186 , H01L23/532
CPC分类号: H01L29/1606 , C01B32/182 , C01B32/186 , C01B2204/06 , C01B2204/22 , H01L21/0242 , H01L21/02491 , H01L21/02513 , H01L21/02516 , H01L21/02527 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L23/53276 , H01L29/04 , H01L29/045 , H01L29/0665 , H01L29/66742 , H01L29/78603 , H01L29/78684 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要: A GNR is a ribbon-shaped graphene film which includes: five or more (for example, five, seven, or nine) six-membered rings of carbon atoms which are bonded and arranged in line in a short side direction; and a complete armchair type edge structure along a long side direction. By such a constitution, without using a transfer method, there are materialized a highly reliable graphene film which has an armchair type edge structure with a uniform width at a desired value and which enables an electric current on-off ratio of 105 or more that is practically sufficient for exhibiting a desired band gap.
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公开(公告)号:US20190287800A1
公开(公告)日:2019-09-19
申请号:US16299867
申请日:2019-03-12
申请人: FUJITSU LIMITED
发明人: Junichi Yamaguchi
摘要: A graphene nanoribbon precursor has a structure that is indicated by a predetermined chemical formula. In the chemical formula (1), n1 is an integer that is greater than or equal to 1 and less than or equal to 6; X, Y, and Z are F, Cl, Br, I, H, OH, SH, SO2H, SO3H, SO2NH2, PO3H2, NO, NO2, NH2, CH3, CHO, COCH3, COOH, CONH2, COCl, CN, CF3, CCl3, CBr3, or CI3; and when desorption temperatures of X, Y and Z from carbon atoms constituting six-membered rings are respectively TX, TY, and TZ, a relationship of TX
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公开(公告)号:US11156576B2
公开(公告)日:2021-10-26
申请号:US15854901
申请日:2017-12-27
申请人: FUJITSU LIMITED
IPC分类号: G01N27/12 , G01N27/414 , G01N33/00
摘要: A gas sensor includes: a semiconductor layer; a graphene film provided above the semiconductor layer and having at least a portion in contact with gas; and a barrier film between the semiconductor layer and the graphene film.
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公开(公告)号:US09966472B2
公开(公告)日:2018-05-08
申请号:US15494680
申请日:2017-04-24
申请人: FUJITSU LIMITED
发明人: Junichi Yamaguchi
IPC分类号: H01L21/02 , H01L29/786 , H01L29/16 , H01L21/78
CPC分类号: H01L29/78606 , B82Y10/00 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02527 , H01L21/0262 , H01L21/02636 , H01L21/02664 , H01L21/7806 , H01L29/1606 , H01L29/42368 , H01L29/42376 , H01L29/4908 , H01L29/517 , H01L29/66431 , H01L29/66742 , H01L29/7781 , H01L29/78603 , H01L29/78684 , H01L29/78696 , H01L51/0045 , H01L51/0533 , H01L51/0558
摘要: A stacked structure includes: an insulating substrate; a graphene film that is formed on the insulating substrate; and a protective film that is formed on the graphene film and is made of a transition metal oxide, which is, for example, Cr2O3. Thereby, at the time of transfer of the graphene, polymeric materials such as a resist are prevented from directly coming into contact with the graphene and nonessential carrier doping on the graphene caused by a polymeric residue of the resist is suppressed.
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