Invention Grant
- Patent Title: High isolation dual antenna RF switch architectures
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Application No.: US14613105Application Date: 2015-02-03
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Publication No.: US09966671B2Publication Date: 2018-05-08
- Inventor: Ali Tombak , Marcus Granger-Jones
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01Q3/24
- IPC: H01Q3/24 ; H01Q21/28 ; H01Q1/52

Abstract:
RF circuitry, which includes a first main RF switching circuit and a second main RF switching circuit, is disclosed. The first main RF switching circuit is capable of providing an RF signal path between a first main RF port and a first selected one of a first RF antenna and a second RF antenna. The second main RF switching circuit is capable of providing an RF signal path between a second main RF port and a second selected one of the first RF antenna and the second RF antenna. The first main RF switching circuit includes a first pair of RF switches coupled in series between the first RF antenna and the first main RF port; a second pair of RF switches coupled in series between the second RF antenna and the first main RF port; a first shunt RF switch; and a second shunt RF switch.
Public/Granted literature
- US20150222026A1 HIGH ISOLATION DUAL ANTENNA RF SWITCH ARCHITECTURES Public/Granted day:2015-08-06
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