- 专利标题: Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
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申请号: US13398884申请日: 2012-02-17
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公开(公告)号: US09970125B2公开(公告)日: 2018-05-15
- 发明人: Brian H. Mackintosh , Peter L. Kellerman , Dawei Sun
- 申请人: Brian H. Mackintosh , Peter L. Kellerman , Dawei Sun
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: C30B15/20
- IPC分类号: C30B15/20 ; C30B15/00 ; C30B15/14 ; C30B15/06 ; C30B29/06
摘要:
An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.
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