- 专利标题: Memory systems including an input/output buffer circuit
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申请号: US14986773申请日: 2016-01-04
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公开(公告)号: US09971505B2公开(公告)日: 2018-05-15
- 发明人: Youngjin Jeon , Jeongdon Ihm , Kilsoo Kim , Jinman Han
- 申请人: Youngjin Jeon , Jeongdon Ihm , Kilsoo Kim , Jinman Han
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel, P.A.
- 优先权: KR10-2013-0000626 20130103
- 主分类号: G06F3/06
- IPC分类号: G06F3/06 ; G11C7/10 ; G11C7/22 ; G11C7/04
摘要:
Memory systems are provided. A memory system may include a plurality of nonvolatile memories and a memory controller configured to control the plurality of nonvolatile memories. Moreover, the memory system may include an input/output buffer circuit connected between the memory controller and the plurality of nonvolatile memories. A data channel may be connected between the memory controller and the input/output buffer circuit, and first and second internal data channels may be connected between the input/output buffer circuit and respective first and second groups of the plurality of nonvolatile memories. The input/output buffer circuit may be configured to connect the data channel to one of the first and second internal data channels.
公开/授权文献
- US20160117110A1 MEMORY SYSTEMS INCLUDING AN INPUT/OUTPUT BUFFER CIRCUIT 公开/授权日:2016-04-28
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