Invention Grant
- Patent Title: Semiconductor integrated circuit device
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Application No.: US15489944Application Date: 2017-04-18
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Publication No.: US09973074B2Publication Date: 2018-05-15
- Inventor: Ming Liu , Tatsuo Nakagawa , Kenichi Osada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2012-096467 20120420
- Main IPC: H02M1/088
- IPC: H02M1/088 ; G01R19/10 ; H03M1/12 ; H02M3/157 ; H02M3/158 ; H02M1/00

Abstract:
A conventional power supply device has a problem in miniaturization. A power supply device generates a prediction value of an error signal from first and second error signals, and controls an output voltage so that the prediction value lies between first and second threshold values. The first error signal is obtained by converting an error voltage based on the difference between the output voltage and a reference voltage at a first timing. The second error signal is obtained by converting an error voltage based on the difference between the output voltage and the reference voltage at a second timing.
Public/Granted literature
- US20170222540A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2017-08-03
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