Method for programming a magnetic device including a plurality of magnetic logical unit MLU cells using a single programming current, each MLU cell includes a storage magnetic layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature. A programming line is physically separated from each of the plurality of MLU cells and configured for passing a programming current pulse for programming any one of the plurality of MLU cells. The method includes: passing the programming current in the field line for heating the magnetic tunnel junction of each of the plurality of MLU cells at the high threshold temperature such as to unpin the second magnetization; wherein the programming current is further adapted for generating a programming magnetic field adapted for switching the storage magnetization of each of the plurality of MLU cells in a programmed direction.