- 专利标题： Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
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申请号： US15281551申请日： 2016-09-30
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公开(公告)号： US09978855B2公开(公告)日： 2018-05-22
- 发明人: Kosei Noda , Suzunosuke Hiraishi
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权： JP2012-046295 20120302; JP2012-046296 20120302
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/66 ; H01L29/786 ; H01L21/02
摘要：
One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×1016 spins/cm3 and a carrier density lower than 1×1015/cm3. The spin density is calculated from a peak of a signal detected at a g value (g) of around 1.93 by electron spin resonance spectroscopy. The oxide semiconductor film is formed by a sputtering method while bias power is supplied to the substrate side and self-bias voltage is controlled, and then subjected to heat treatment.
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