公开(公告)号：US11894486B2

公开(公告)日：2024-02-06

申请号：US17978269

申请日：2022-11-01

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Suzunosuke Hiraishi

IPC分类号： H01L33/00 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  H10K59/121

CPC分类号： H01L33/0041 ,  H01L27/124 ,  H01L27/1225 ,  H01L29/7869 ,  G02F1/1368 ,  H01L2924/0002 ,  H10K59/1213 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.

公开(公告)号：US11764074B2

公开(公告)日：2023-09-19

申请号：US17011019

申请日：2020-09-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L21/477 ,  H01L21/02 ,  H01L21/28

CPC分类号： H01L21/477 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78606

摘要： To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US10770310B2

公开(公告)日：2020-09-08

申请号：US16524733

申请日：2019-07-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC分类号： H01L21/477 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L21/28

摘要： To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US09634031B2

公开(公告)日：2017-04-25

申请号：US14741840

申请日：2015-06-17

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Masami Jintyou ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Suzunosuke Hiraishi

IPC分类号： H01L29/10 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC分类号： H01L27/1225 ,  H01L21/385 ,  H01L21/441 ,  H01L21/47573 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： To suppress change in electric characteristics and improve reliability of a semiconductor device including a transistor formed using an oxide semiconductor. A semiconductor device includes a transistor including a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, and a pair of electrodes. The gate electrode and the oxide semiconductor film overlap with each other. The oxide semiconductor film is located between the first insulating film and the second insulating film and in contact with the pair of electrodes. The first insulating film is located between the gate electrode and the oxide semiconductor film. An etching rate of a region of at least one of the first insulating film and the second insulating film is higher than 8 nm/min when etching is performed using a hydrofluoric acid.

公开(公告)号：US09275875B2

公开(公告)日：2016-03-01

申请号：US14529525

申请日：2014-10-31

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Ryosuke Watanabe ,  Suzunosuke Hiraishi ,  Junichiro Sakata

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/477 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L21/477 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.

摘要翻译： 目的在于提供一种具有稳定的电气特性和高可靠性的氧化物半导体的半导体装置。 在包括氧化物半导体层的底栅晶体管的制造工艺中，在氧化物气氛中进行热处理，在真空中进行热处理，依次进行氧化物半导体层的脱水或脱氢。 此外，与热处理同时进行具有短波长的光的照射，由此促进氢，OH等的消除。 包括通过这种热处理进行脱水或脱氢处理的氧化物半导体层的晶体管具有改善的稳定性，从而抑制了由于光照射或偏压温度应力（BT）测试而导致的晶体管的电特性的变化。

公开(公告)号：US09196690B2

公开(公告)日：2015-11-24

申请号：US14483662

申请日：2014-09-11

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tatsuya Honda ,  Hiroshi Kanemura ,  Kengo Akimoto ,  Suzunosuke Hiraishi

IPC分类号： H01L29/38 ,  H01L29/786 ,  H01L27/15 ,  H01L27/32 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/247 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film.

摘要翻译： 提供了具有更稳定的电特性并且基本上由氧化铟锌组成的氧化物半导体膜。 此外，提供了通过使用氧化物半导体膜具有稳定的电特性的高度可靠的半导体器件。 基本上由氧化铟锌组成的氧化物半导体膜具有六边形晶体结构，其中ab平面基本上平行于氧化物半导体膜的表面，并且其中ab平面基本上平行于氧化物表面的菱方晶体结构 半导体膜。

公开(公告)号：US10741414B2

公开(公告)日：2020-08-11

申请号：US15584223

申请日：2017-05-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC分类号： H01L21/477 ,  H01L21/02 ,  H01L21/28 ,  H01L29/786 ,  H01L29/24

摘要： To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US10546759B2

公开(公告)日：2020-01-28

申请号：US15584223

申请日：2017-05-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC分类号： H01L21/477 ,  H01L21/02 ,  H01L29/786 ,  H01L29/24 ,  H01L21/28

摘要： To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US09978855B2

公开(公告)日：2018-05-22

申请号：US15281551

申请日：2016-09-30

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Kosei Noda ,  Suzunosuke Hiraishi

IPC分类号： H01L29/10 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/78621 ,  H01L29/7869 ,  H01L29/78696

摘要： One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×1016 spins/cm3 and a carrier density lower than 1×1015/cm3. The spin density is calculated from a peak of a signal detected at a g value (g) of around 1.93 by electron spin resonance spectroscopy. The oxide semiconductor film is formed by a sputtering method while bias power is supplied to the substrate side and self-bias voltage is controlled, and then subjected to heat treatment.

公开(公告)号：US20150093853A1

公开(公告)日：2015-04-02

申请号：US14489522

申请日：2014-09-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using a metal whose work function is lower than the work function of the oxide semiconductor layer or an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.

摘要翻译： 在包括氧化物半导体层的薄膜晶体管中，目的是减少氧化物半导体层与与氧化物半导体层电连接的源电极层和漏电极层之间的接触电阻。 源极和漏极电极层具有两层或多层的层叠结构，其中使用功函数低于氧化物半导体层的功函数或合金的金属形成与氧化物半导体层接触的层 含有这样的金属。 使用选自Al，Cr，Cu，Ta，Ti，Mo或W的元素形成与源极和漏极电极层的氧化物半导体层接触的层以外的层，包含任何这些元素作为 组分，包含任何这些元素组合的合金等。