- 专利标题: Integrated circuitry and 3D memory
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申请号: US14995709申请日: 2016-01-14
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公开(公告)号: US09985040B2公开(公告)日: 2018-05-29
- 发明人: David Daycock
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John P.S.
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; H01L27/11551 ; H01L27/11526 ; H01L27/11573 ; H01L27/11578 ; G11C5/02 ; H01L27/11582
摘要:
Integrated circuitry has an array circuitry region having a repeating array of electronic components. An adjacent circuitry region is immediately laterally adjacent to and contacts one elongated major peripheral side of the array circuitry region. The adjacent circuitry region is distinct in structure from the array circuitry region where contacting the array circuitry region and distinct in operation from the array circuitry region. The array circuitry region and the adjacent circuitry region have a respective longitudinally non-linear edge at an interface relative one another along the one elongated major peripheral side of the array circuitry region. Other embodiments are disclosed.
公开/授权文献
- US20170206964A1 Integrated Circuitry and 3D Memory 公开/授权日:2017-07-20
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