- 专利标题: Reactive sputter deposition of silicon films
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申请号: US13887013申请日: 2013-05-03
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公开(公告)号: US09988705B2公开(公告)日: 2018-06-05
- 发明人: Georg J. Ockenfuss
- 申请人: Viavi Solutions Inc.
- 申请人地址: US CA San Jose
- 专利权人: VIAVI Solutions Inc.
- 当前专利权人: VIAVI Solutions Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Harrity & Harrity, LLP
- 主分类号: C23C14/00
- IPC分类号: C23C14/00 ; C23C14/10 ; C23C14/34 ; H01J37/34
摘要:
Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.
公开/授权文献
- US20130292244A1 REACTIVE SPUTTER DEPOSITION OF DIELECTRIC FILMS 公开/授权日:2013-11-07
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