- 专利标题: Transparent conducting indium doped tin oxide
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申请号: US14292200申请日: 2014-05-30
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公开(公告)号: US09988707B2公开(公告)日: 2018-06-05
- 发明人: Krishna K. Uprety , Khushroo H. Lakdawala , Russell Shellenberger , Mahmood Ahmad Ali
- 申请人: PPG INDUSTRIES OHIO, INC.
- 申请人地址: US OH Cleveland
- 专利权人: PPG INDUSTRIES OHIO, INC.
- 当前专利权人: PPG INDUSTRIES OHIO, INC.
- 当前专利权人地址: US OH Cleveland
- 代理机构: Lewis Roca Rothgerber Christie LLP
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; C23C14/08
摘要:
A method of manufacturing indium tin oxide includes sputtering indium and tin from a target onto a substrate, the sputtering including moving the target along a path over the substrate. The indium tin oxide may have a sheet resistance less than 0.5 Ω/□. An indium film includes: a first moving target sputtered indium tin oxide layer; a second moving target sputtered indium tin oxide layer on the first moving target sputtered indium tin oxide layer; and a third moving target sputtered indium tin oxide layer on the second moving target sputtered indium tin oxide layer. A transparency includes the indium tin oxide, and a flying vehicle includes the transparency.
公开/授权文献
- US20150345006A1 TRANSPARENT CONDUCTING INDIUM DOPED TIN OXIDE 公开/授权日:2015-12-03
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