A method of forming an amorphous carbon monolayer (ACM) and an electronic device including the ACM are provided. The method includes forming the ACM on a surface of a germanium (Ge) substrate via a chemical vapor deposition (CVD) process. The CVD process includes injecting a reaction gas including carbon-containing gas and hydrogen (H2) gas in to a reaction chamber containing the Ge substrate, wherein a partial pressure of the H2 gas in the reaction chamber may range from 1 Torr to 30 Torr.