Invention Grant
- Patent Title: Dilution doped integrated circuit resistors
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Application No.: US14576680Application Date: 2014-12-19
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Publication No.: US09991120B2Publication Date: 2018-06-05
- Inventor: Scott K. Montgomery , Scott R. Summerfelt
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/266 ; H01L49/02 ; H01L27/06

Abstract:
A process for forming an integrated circuit with a dilution doped resistor with a resistance that may be tuned by partially blocking the implant used to dope the resistor. A process for forming an integrated circuit with a dilution doped polysilicon resistor by partially blocking the resistor dopant implant from a portion of the polysilicon resistor body.
Public/Granted literature
- US20150187583A1 DILUTION DOPED INTEGRATED CIRCUIT RESISTORS Public/Granted day:2015-07-02
Information query
IPC分类: