Invention Grant
- Patent Title: Methods of forming semiconductor device structures including two-dimensional material structures
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Application No.: US15253454Application Date: 2016-08-31
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Publication No.: US09991122B2Publication Date: 2018-06-05
- Inventor: Roy E. Meade , Sumeet C. Pandey
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L21/268 ; H01L21/477 ; H01L29/06 ; H01L21/02
Abstract:
A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.
Public/Granted literature
- US20180061665A1 METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES INCLUDING TWO-DIMENSIONAL MATERIAL STRUCTURES Public/Granted day:2018-03-01
Information query
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