公开(公告)号：US20180061665A1

公开(公告)日：2018-03-01

申请号：US15253454

申请日：2016-08-31

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Sumeet C. Pandey

IPC: H01L21/477 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/268 ,  H01L21/02521 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02675 ,  H01L21/428 ,  H01L21/477 ,  H01L29/0665

Abstract: A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

公开(公告)号：US09269888B2

公开(公告)日：2016-02-23

申请号：US14256655

申请日：2014-04-18

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Sumeet C. Pandey ,  Gurtej S. Sandhu

IPC: H01L29/82 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic cell includes a magnetic tunnel junction that comprises magnetic and nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal structure is enabled by a seed material, proximate to the magnetic tunnel junction, that exhibits a hexagonal crystal structure matching the hexagonal crystal structure of the adjoining magnetic material of the magnetic tunnel junction. In some embodiments, the seed material is formed adjacent to an amorphous foundation material that enables the seed material to be formed at the hexagonal crystal structure. In some embodiments, the magnetic cell includes hexagonal cobalt (h-Co) free and fixed regions and a hexagonal boron nitride (h-BN) tunnel barrier region with a hexagonal zinc (h-Zn) seed region adjacent the h-Co. The structure of the magnetic cell enables high tunnel magnetoresistance, high magnetic anisotropy strength, and low damping. Methods of fabrication and semiconductor devices are also disclosed.

Abstract translation: 磁性电池包括磁性隧道结，其包括具有六方晶系结构的磁性和非磁性材料。 六方晶体结构通过靠近磁性隧道结的种子材料实现，其表现出与磁性隧道结相邻的磁性材料的六方晶系结构相匹配的六方晶系结构。 在一些实施方案中，种子材料邻近无定形基底材料形成，使得种子材料能够以六方晶体结构形成。 在一些实施方案中，磁性电池包括六方钴（h-Co）游离和固定区域以及与h-Co相邻的六方锌（h-Zn）种子区域的六方氮化硼（h-BN）隧道势垒区。 磁性单元的结构能够实现高隧道磁阻，高磁各向异性强度和低阻尼。 还公开了制造方法和半导体器件。

公开(公告)号：US09036401B2

公开(公告)日：2015-05-19

申请号：US14171243

申请日：2014-02-03

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  John K. Zahurak

IPC: G11C11/00 ,  G11C7/12 ,  G11C13/00

CPC classification number: G11C7/12 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0038 ,  G11C13/0061 ,  G11C13/0069

Abstract: Methods, devices, and systems associated with memory cell operation are described. One or more methods of operating a memory cell include charging a capacitor coupled to the memory cell to a particular voltage level and programming the memory cell from a first state to a second state by controlling discharge of the capacitor through a resistive switching element of the memory cell.

Abstract translation: 描述与存储器单元操作相关联的方法，设备和系统。 操作存储器单元的一种或多种方法包括将耦合到存储器单元的电容器充电到特定的电压电平，并通过控制存储器的电阻式开关元件的电容放电来将存储器单元从第一状态编程到第二状态 细胞。

公开(公告)号：US08829531B2

公开(公告)日：2014-09-09

申请号：US14157937

申请日：2014-01-17

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: H01L31/0232 ,  G02B6/12

CPC classification number: H01L31/02325 ,  G02B6/12004 ,  G02B6/1223 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/1808

Abstract: Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.

Abstract translation: 一些实施例包括光子系统。 该系统可以包括配置成沿着路径引导光的含硅波导和靠近含硅波导的检测器。 检测器可以包括具有较低区域和上部区域的检测器材料，其中下部区域具有比上部区域更高的缺陷浓度。 在一些实施例中，检测器材料可以包括锗。 一些实施例包括形成光子系统的方法。

公开(公告)号：US20140131733A1

公开(公告)日：2014-05-15

申请号：US14157937

申请日：2014-01-17

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: H01L31/0232

CPC classification number: H01L31/02325 ,  G02B6/12004 ,  G02B6/1223 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/1808

Abstract: Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.

Abstract translation: 一些实施例包括光子系统。 该系统可以包括配置成沿着路径引导光的含硅波导和靠近含硅波导的检测器。 检测器可以包括具有较低区域和上部区域的检测器材料，其中下部区域具有比上部区域更高的缺陷浓度。 在一些实施例中，检测器材料可以包括锗。 一些实施例包括形成光子系统的方法。

公开(公告)号：US08669629B2

公开(公告)日：2014-03-11

申请号：US13766970

申请日：2013-02-14

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/02325 ,  G02B6/12004 ,  G02B6/1223 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/1808

Abstract: Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.

公开(公告)号：US20190162903A1

公开(公告)日：2019-05-30

申请号：US16247996

申请日：2019-01-15

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: G02B6/136 ,  H01L21/762 ,  G02B6/122

Abstract: Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.

公开(公告)号：US20180144796A1

公开(公告)日：2018-05-24

申请号：US15864995

申请日：2018-01-08

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: G11C13/00 ,  H01L45/00 ,  G11C7/04

CPC classification number: G11C13/0004 ,  G11C7/04 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0095 ,  H01L45/06 ,  H01L45/12 ,  H01L45/126 ,  H01L45/144

Abstract: Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material.

公开(公告)号：US20180082730A1

公开(公告)日：2018-03-22

申请号：US15823139

申请日：2017-11-27

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: G11C11/24 ,  H01L45/00 ,  G11C8/08 ,  H01L27/10 ,  H01L49/02 ,  G11C13/00 ,  G11C11/56 ,  G11C11/34

CPC classification number: G11C11/24 ,  G11C8/08 ,  G11C11/34 ,  G11C11/56 ,  G11C11/565 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  H01L27/101 ,  H01L28/40 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233

Abstract: Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.

公开(公告)号：US09865339B2

公开(公告)日：2018-01-09

申请号：US14850662

申请日：2015-09-10

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: G11C13/00 ,  H01L45/00 ,  G11C7/04

CPC classification number: G11C13/0004 ,  G11C7/04 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0095 ,  H01L45/06 ,  H01L45/12 ,  H01L45/126 ,  H01L45/144

Abstract: Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material.