- 专利标题: Semiconductor device for reducing self-inductance
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申请号: US14963701申请日: 2015-12-09
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公开(公告)号: US09991180B2公开(公告)日: 2018-06-05
- 发明人: Hideki Tsukamoto , Mituharu Tabata
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 优先权: JP2015-083847 20150416
- 主分类号: H01L23/043
- IPC分类号: H01L23/043 ; H01L25/07
摘要:
A semiconductor device includes: a resin case that houses a semiconductor element; a parallel plate that is disposed inside the resin case while being connected with the semiconductor element, the parallel plate including two flat plates parallel to each other with an insulating material therebetween; two electrodes that are each led out from two electrode lead-out portions in an upper end of the parallel plate and are disposed on an upper surface of the resin case at a predetermined interval; and a metal plate that stands erect on the main surface of the flat plate in a region at the predetermined interval between the two electrode lead-out portions.
公开/授权文献
- US20160307813A1 SEMICONDUCTOR DEVICE 公开/授权日:2016-10-20
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