Driving circuit and semiconductor device
    3.
    发明授权
    Driving circuit and semiconductor device 有权
    驱动电路和半导体器件

    公开(公告)号:US09094012B2

    公开(公告)日:2015-07-28

    申请号:US14251703

    申请日:2014-04-14

    IPC分类号: H03K3/00 H03K17/16

    CPC分类号: H03K17/165 H03K17/167

    摘要: A driving circuit of the present invention drives a switching element connected to a main current circuit. The driving circuit includes a driving potion applying on/off-voltage to a gate of the switching element, a common inductor disposed in an interconnection part commonly connected to the driving circuit and a source side of the switching element in a loop formed of the main current circuit and the switching element, and a capacitor connected between the gate side and the source side on the driving portion side with respect to the common inductor.

    摘要翻译: 本发明的驱动电路驱动与主电流电路连接的开关元件。 驱动电路包括对开关元件的栅极施加导通/截止电压的驱动部分,设置在与主驱动电路共同连接的布线部分中的公共电感器以及由主电路形成的环路中的开关元件的源极侧 电流电路和开关元件,以及电容器,其相对于公共电感器连接在驱动部分侧的栅极侧和源极侧之间。

    Semiconductor device and method for producing the same

    公开(公告)号:US10600765B2

    公开(公告)日:2020-03-24

    申请号:US15153762

    申请日:2016-05-13

    发明人: Mituharu Tabata

    摘要: A technique disclosed in the specification relates to a semiconductor device capable of minimizing restrictions on wire bonding activities and to a method for producing the semiconductor device. The semiconductor device of the present technique includes: a plurality of semiconductor chips disposed on a circuit pattern within a case defined by an outer frame in a plan view; and bonding wires for electrically connecting the semiconductor chips and the circuit pattern together. The semiconductor chips are arranged along a longer-side direction of the case. The bonding wires are strung along the longer-side direction of the case.

    Semiconductor device for reducing self-inductance

    公开(公告)号:US09991180B2

    公开(公告)日:2018-06-05

    申请号:US14963701

    申请日:2015-12-09

    IPC分类号: H01L23/043 H01L25/07

    摘要: A semiconductor device includes: a resin case that houses a semiconductor element; a parallel plate that is disposed inside the resin case while being connected with the semiconductor element, the parallel plate including two flat plates parallel to each other with an insulating material therebetween; two electrodes that are each led out from two electrode lead-out portions in an upper end of the parallel plate and are disposed on an upper surface of the resin case at a predetermined interval; and a metal plate that stands erect on the main surface of the flat plate in a region at the predetermined interval between the two electrode lead-out portions.

    Semiconductor device
    9.
    发明授权

    公开(公告)号:US09627284B2

    公开(公告)日:2017-04-18

    申请号:US14926805

    申请日:2015-10-29

    CPC分类号: H01L23/055 H01L23/552

    摘要: A semiconductor device includes: a resin case that houses a semiconductor element; a parallel plate that is disposed inside the resin case while being connected with the semiconductor element, the parallel plate including two flat plates parallel to each other with an insulating material therebetween; and two electrodes that are each led out from an upper end of the parallel plate and are disposed on an upper surface of the resin case at a predetermined interval. Upper end portions of the two flat plates of the parallel plate between two electrode lead-out portions are bent toward the outside being a direction in which the upper end portions of the two flat plates become more distant from each other, the two electrodes being led out from the corresponding two electrode lead-out portions.