Invention Grant
- Patent Title: Semiconductor device package
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Application No.: US15621968Application Date: 2017-06-13
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Publication No.: US09991193B2Publication Date: 2018-06-05
- Inventor: Kay Stefan Essig , Chi-Tsung Chiu , Hui Hua Lee
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A semiconductor device package includes a first conductive base, a first semiconductor die, a dielectric layer, a first patterned conductive layer, and a second patterned conductive layer. The first conductive base defines a first cavity. The first semiconductor die is on a bottom surface of the first cavity. The dielectric layer covers the first semiconductor die, the first surface and the second surface of the first conductive base and fills the first cavity. The first patterned conductive layer is on a first surface of the dielectric layer. The second patterned conductive layer is on a second surface of the dielectric layer.
Public/Granted literature
- US20170365542A1 SEMICONDUCTOR DEVICE PACKAGE Public/Granted day:2017-12-21
Information query
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